high voltage medium current driver arrays ?? ? ? ? ? ? high r eliability features followi ng ar e th e hi gh r eliability fe atures of sg 2000 series : ? ?? ? the sg2000 series integrates seven npn darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. all units feature open collector outputs with greater than 50v breakdown voltages combined with 500ma current carrying capabilities. five different input configurations provide optimized designs for interfacing with dtl, ttl, pmos, or cmos drive signals. these devices are designed to operate from -55c to 125c ambient temperature in a 16 pin dual in line ceramic (j) package and 20 pin leadless chip carrier (lcc). the plastic soic (dw) is designed to operate over the commercial temperature range of 0c to 70c. sg 2000 december 2014 rev. 1. 4 www.microsemi.com 1 ? 2014 microsemi corporation features description seven npn darlington p airs -55c to 125c a mbient o perating t emperature r ange collector c urrents to 600ma output v oltages from 50v to 95v internal c lamping d iodes for i nduc tive l oads dtl, ttl, pmos, or cmos c ompatible i nputs hermetic c eramic p ackage available to mil-std-883 C 883, ? 1.2.1mil-m38510/14101bea - SG2001J-JAN mil-m38510/14102bea - sg2002j-jan mil-m38510/14103bea - sg2003j-jan mil-m38510/14104bea - sg2004j-jan - msc-ams level "s" processing available ? partial schematics figure 1 partial s chematics ? available to dscc - standard microcircuit drawing (smd) k k k k k k k k k k k k k k downloaded from: http:///
2 peak collector current, i c (sg2000, 2020) ......................................................(sg2010) ................................................................ operating junction temperature hermetic (j, l packages) ......................................... plastic ( dw package) ............................................... storage temperature range ..........................lead temperature (soldering 10 sec.) ......................... absolute maximum ratings (note 1) output voltage, v ce (sg2000, 2010 series) ................................................(sg2020 series) .......................................................... input voltage, v in (sg2002,3,4) ............................................................... continuous input current, i in ........................................ 50v95v 30v 25ma 500ma600ma 150 c 25 c -65 c to 150 c 300 c note 1. values beyond which damage may occur. thermal data j package: thermal resistance- junction to case , jc .................. . 30c/w thermal resistance- junction to ambient , ja ............... 80c/w dw package: thermal resistance- junction to case , jc .................. .. 35 c/w thermal resistance- junction to ambient , ja .............. .. 90 c/w l package: thermal resistance- junction to case , jc .................. 35c/w thermal resistance- junction to ambient , ja ............ 120c/w note a. junction temperature calculation: t j = t a + (p d x ja ). note b. the above numbers for jc are maximums for the limiting thermal resistance of the package in a standard mounting configuration.the ja numbers are meant to be guidelines for the thermal performance of the device/pc-board system. all of the aboveassume no ambient airflow. recommended operating conditions (note 2) output voltage, v ce sg2000, sg2010 series ..............................................sg2020 series ............................................................. 50v95v peak collector current, i c sg2000, sg2020 series ...........................................sg2010 series ........................................................ operating ambient temperature range sg2000 series - hermetic ..........................sg2000 series - plastic .................................. 50ma 500ma -55 c to 125 c 0 c to 70 c note 2. range over which the device is functional. selection guide device v ce max i c max logic inputs sg2001 50v 500ma general purposepmos, cmos sg2002 50v 500ma 14v-25v pmos sg2003 50v 500ma 5v ttl, cmos sg2004 50v 500ma 6v-15v cmos, pmos sg2011 50v 600ma general purposepmos, cmos sg2012 50v 600ma 14v-25v pmos device v ce max i c max logic inputs sg2013 50v 600ma 5v ttl, cmos sg2014 50v 600ma 6v-15v cmos, pmos sg2015 50v 600ma high output ttl sg2021 95v 500ma general purpose pmos, cmos sg2023 95v 500ma 5v ttl, cmos sg2024 95v 500ma 6v-15v cmos, pmos rohs peak package solder reflow temp. (40 sec. max. exp.)...... 260c (+0, -5) downloaded from: http:///
3 (unless otherwise specified, these specifications apply over the operating ambient temperatures for sg2000 series - hermetic - with -55 c t a 125 c and sg2000 series - plastic - with 0 c t a 70 c. low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) parameter units min typ max limits test conditions all sg2002sg2004 all sg2002sg2003 sg2004 all sg2002sg2003 sg2004 sg2001 allall all all all applicable devices temp. sg2001 thru sg2004 output leakage current (i cex ) collector - emitter (v ce(sat) ) input current (i in(on) ) input current (i in(off) ) input voltage (v in(on) ) dc forward current transfer ratio (h fe ) input capacitance (c in ) (note 3) turn-on delay (tplh)turn-off delay (tphl) clamp diode leakage current (i r ) clamp diode forward voltage (v f ) t a = t min t a = t min t a = t min t a = 25c t a = 25c t a = 25c t a = t max t a = t max t a = t max t a = t max t a = t min t a = t max t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t min t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t max t a = t min t a = 25c t a = 25c t a = 25c t a = 25c v ce = 50v v ce = 50v, v in = 6v v ce = 50v, v in = 1v i c = 350ma, i b = 850 a i c = 200ma, i b = 550 a i c = 100ma, i b = 350 a i c = 350ma, i b = 500 a i c = 200ma, i b = 350 a i c = 100ma, i b = 250 a i c = 350ma, i b = 500 a i c = 200ma, i b = 350 a i c = 100ma, i b = 250 a v in = 17v v in = 3.85v v in = 5v v in = 12v i c = 500 a v ce = 2v, i c = 300ma v ce = 2v, i c = 300ma v ce = 2v, i c = 200ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 200ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 125ma v ce = 2v, i c = 200ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 125ma v ce = 2v, i c = 200ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 350ma v ce = 2v, i c = 350ma 0.5 e in to 0.5 e out 0.5 e in to 0.5 e out v r = 50v i f = 350ma 480650 240 650 25 500 1000 1.61.3 1.1 1.25 1.10.9 1.6 1.3 1.1 850930 350 1000 5015 250250 1.7 100500 500 1.81.5 1.3 1.6 1.3 1.1 1.8 1.5 1.3 13001350 500 1450 1813 3.33.6 3.9 2.4 2.7 3.0 6.0 8.0 1012 5.06.0 7.0 8.0 25 10001000 50 2.0 a a a vv v v v v v v v a a a a a vv v v v v v v v v v v v v v v pfns ns a v note 3. these parameters, although guaranteed, are not tested in production. electrical characteristics ma downloaded from: http:///
4 parameter units min typ max limits test conditions applicable devices temp. sg2011 thru sg2015 output leakage current (i cex ) collector - emitter (v ce(sat) ) input current (i in(on) ) input current (i in(off) ) input voltage (v in(on) ) dc forward current transfer ratio (h fe ) input capacitance (c in ) (note 3) turn-on delay (tplh)turn-off delay (tphl) clamp diode leakage current (i r ) clamp diode forward voltage (v f ) all sg2012sg2014 all sg2012sg2013 sg2014 sg2015 all sg2012sg2013 sg2014 sg2015 sg2011 allall all all all t a = t min t a = t min t a = t min t a = 25c t a = 25c t a = 25c t a = t max t a = t max t a = t max t a = t max t a = t min t a = t max t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t min t a = t min t a = t max t a = t max t a = t min t a = 25c t a = 25c t a = 25c t a = 25c v ce = 50v v ce = 50v, v in = 6v v ce = 50v, v in = 1v i c = 500ma, i b = 1100 a i c = 350ma, i b = 850 a i c = 200ma, i b = 550 a i c = 500ma, i b = 600 a i c = 350ma, i b = 500 a i c = 200ma, i b = 350 a i c = 500ma, i b = 600 a i c = 350ma, i b = 500 a i c = 200ma, i b = 350 a v in = 17v v in = 3.85v v in = 5v v in = 12v v in = 3v i c = 500 a v ce = 2v, i c = 500ma v ce = 2v, i c = 500ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 500ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 500ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 500ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 500ma v ce = 2v, i c = 350ma v ce = 2v, i c = 500ma v ce = 2v, i c = 350ma v ce = 2v, i c = 500ma v ce = 2v, i c = 500ma v ce = 2v, i c = 500ma 0.5 e in to 0.5 e out 0.5 e in to 0.5 e out v r = 50v i f = 350ma i f = 500ma 480650 240 650 1180 25 450900 1.81.6 1.3 1.7 1.25 1.11.8 1.6 1.3 850930 350 10001500 5015 250250 1.7 100500 500 2.11.8 1.5 1.9 1.6 1.3 2.1 1.8 1.5 13001350 500 14502400 23.5 17 3.63.9 6.0 2.7 3.0 3.5 1012 17 7.08.0 9.5 3.0 3.5 2.4 2.6 25 10001000 50 2.02.5 a a a vv v v v v v v v a a a a a a vv v v v v v v v v v v v v v v v v pfns ns a vv note 3. these parameters, although guaranteed, are not tested in production. electrical characteristics (continued) ma downloaded from: http:///
5 parameter units min typ max limits test conditions applicable devices temp. sg2021 thru sg2024 v ce = 95v v ce = 95v, v in = 1v i c = 350ma, i b = 850 a i c = 200ma, i b = 550 a i c = 100ma, i b = 350 a i c = 350ma, i b = 500 a i c = 200ma, i b = 350 a i c = 100ma, i b = 250 a i c = 350ma, i b = 500 a i c = 200ma, i b = 350 a i c = 100ma, i b = 250 a v in = 3.85v v in = 5v v in = 12v i c = 500 a v ce = 2v, i c = 300ma v ce = 2v, i c = 200ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 200ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 125ma v ce = 2v, i c = 200ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 125ma v ce = 2v, i c = 200ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 350ma v ce = 2v, i c = 350ma 0.5 e in to 0.5 e out 0.5 e in to 0.5 e out v r = 95v i f = 350ma t a = t min t a = t min t a = t min t a = 25c t a = 25c t a = 25c t a = t max t a = t max t a = t max t a = t max t a = t max t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t min t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t max t a = t min t a = 25c t a = 25c t a = 25c t a = 25c all sg2024 all sg2023sg2024 all sg2023sg2024 sg2021 allall all all all output leakage current (i cex ) collector - emitter (v ce(sat) ) input current (i in(on) ) input current (i in(off) ) input voltage (v in(on) ) dc forward current transfer ratio (h fe ) input capacitance (c in ) (note 3) turn-on delay (tplh)turn-off delay (tphl) clamp diode leakage current (i r ) clamp diode forward voltage (v f ) 650240 650 25 500 1000 1.61.3 1.1 1.25 1.10.9 1.6 1.3 1.1 930350 1000 5015 250250 1.7 100500 1.81.5 1.3 1.6 1.3 1.1 1.8 1.5 1.3 1350 500 1450 13 3.33.6 3.9 2.4 2.7 3.0 6.0 8.0 1012 5.06.0 7.0 8.0 25 10001000 50 2.0 a a vv v v v v v v v a a a a vv v v v v v v v v v v v v v pfns ns a v note 3. these parameters, although guaranteed, are not tested in production. e lectrical characteristics (continu ed) ma downloaded from: http:///
6 characteristic curves figure 5. input characteristics - sg2002 figure 6. i nput characteristics - sg2003 figure 7. input characteristics - sg2004 figure 8. peak collector current vs. duty cycle figure 3. output current vs. input voltage figure 4. output current vs. input current figure 2. output characteristics downloaded from: http:///
7 note 1. contact factory for jan and desc product availability. 2. all parts are viewed from the top. 3. see selection guide for specific device types. connection diagrams and ordering information (see notes below) ambient temperature range part no. (note 3) packag e connection diagram 16-pin ceramic dipj - package sg2xxxj - 883b -55 c to 125 c sg2023j - desc -55 c to 125 c -55 c to 125 c -55 c to 125 c -55 c to 125 c -55 c to 125 c SG2001J-JAN sg2002j-jan sg2003j-jan sg2004j-jan sg2xxxj -55 c to 125 c 1 7 6 5 4 3 28 109 11 12 13 14 1615 sg2003 dw 0 c to 70 c sg2023 dw 0 c to 70 c 16-pin plastic soic dw - package 20-pin ceramicleadless chip carrier l- package -55 c to 125 c sg2xxxl - 883b sg2xxxl -55 c to 125 c 18 4 9 31 9 20 1 2 14 15 1716 8 7 6 5 13 12 11 10 dw package: rohs compliant / pb-free transition dc: 05 16 dw package: rohs / pb-free 100% matte tin lead finish dw package (not pictured) is 16-pin wide body soic, same pinout as j package pictured above. 4. hermetic packages j and l use pb37/sn63 hot solder lead finish, contact factory for availability of rohs versions. 5. downloaded from: http:///
package outline dimensions controlling dimensions ar e i n inches, metric equivalents ar e show n for general information. note: dimensions do not include protrusions; these shall not exceed 0.155mm (.006) on any side. lead dimension shall not include solder coverage. figure 9 j 16 -pin cerdip package dimensions 8 d e 9 16 1 8 ea b h b2 c seating plane e q a l d im m illimeters i nches min max min max a 5.08 0.200 b 0.38 0.51 0.015 0.020 b2 1.04 1.65 0.045 0.065 c 0.20 0.38 0.008 0.015 d 19.30 19.94 0.760 0.785 e 5.59 7.11 0.220 0.280 e 2.54 bsc * 0.100 bsc ea 7.37 7.87 0.290 0.310 h 0.63 1.78 0.025 0.070 l 3.18 5.08 0.125 0.20 0 - 15 - 15 q 0.51 1.02 0.020 0.040 * bsc: basic spacing between centers dim millimeters inches min max min max a 2. 06 2.65 0.081 0.104 a1 0.10 0.30 0.004 0.01 2 a2 2. 03 2.55 0.080 0.100 b 0.33 0.51 0.013 0.020 c 0.23 0.32 0.00 9 0.01 3 d 10 .08 10. 50 0.3 97 0.413 e 7. 40 7.60 0.291 0.299 e 1.27 bsc 0.05 bsc h 10.00 10.65 0.394 0.419 l 0.40 1.27 0.016 0.050 0 8 0 8 *lc - 0.10 - 0.004 *lead co planarity note: dimensions do not include protrusions; these shall not exceed 0.155mm (.006) on any side. lead dimension shall not include solder coverage. dimensions are in mm, inches are for reference only. figure 10 dw 16 - pin sowb package dimensions downloaded from: http:///
d e3 l l2 b1 e b3 a2 a1 a 1 3 8 13 18 h e dim millimeters inches min max min max d/e 8.64 9.14 0.340 0.360 e3 - 8.128 - 0.320 e 1.270 bsc 0.050 bsc b1 0.635 typ 0.025 typ l 1.02 1.52 0.040 0.060 a 1.626 2.286 0.064 0.090 h 1.016 typ 0.040 typ a1 1.372 1.68 0.054 0.066 a2 - 1.168 - 0.046 l2 1.91 2.41 0.075 0.95 b3 0.203r 0.008r note: all exposed metalized area shall be gold plated 60 micro - inch minimum thickness over nickel plated unless otherwise specified in purchase order. figure 1 1 l 20 -pin ceramic lcc pack age outline dimensions 9 package outline dimensions (continued) downloaded from: http:///
sg2000.1/12.14 microsemi corporate headquarters one enterprise, aliso viejo, ca 92656 usa within the usa : +1 (800) 713-4113 outside the usa : +1 (949) 380-6100 sales : +1 (949) 380-6136 fax : +1 (949) 215-4996 e-mail: sales.support@microsemi.com microsemi corporation (nasdaq: mscc) offers a comprehensive portfolio of semiconductor and system solutions for comm unications, defense & securi ty, aerospace and industrial markets. products include high-performance and radiation-hardened analog mixed-signal integrated circuits, fpgas, socs and asi cs; power management products; timing and synchronization devices and precise time soluti ons, setting the worlds standard for time; voice processing devices; rf solutions; discrete components; security technologies and scalable anti-tamper products; power-over-ethernet ic s and midspans; as well as custom design capabilities and services. microsemi is head quartered in aliso viejo, calif., and has approximately 3,400 employees globally. learn more at www.microsemi.com . ? 2014 microsemi corporation. all rights reserved. microsemi and the microsemi logo are trademarks of microsemi corporation. all other trademarks and service marks are the property of their respective owners. microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. the products sold hereunder and any other products sold by microsem i have been subject to li mited testing and should not be used in conjunction with missi on-critical equipment or applications. any performance specifications are believed to be reliable but are not verified, and buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. buyer shall not rely on any data and performance specifications or para meters provided by micr osemi. it is the buyer's responsibility to independently determine suitability of any products and to test and verify the same. the information provided by microsemi hereunder is provi ded "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the buyer. microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other ip rights, whether with regard to such information itself or anything described by such in formation. information provided in this document is proprietary to microsemi, and microsemi reserves the ri ght to make any changes to the information in this document or to any products and services at any time without notice. downloaded from: http:///
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